FDG316P Datasheet - Fairchild Semiconductor

FDG316P P-Channel Logic Level PowerTrench MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDG316P Features

* -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V.

* Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

FDG316P_FairchildSemiconductor.pdf