FDG316P

P-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor

FDG316P Features

* -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V.

* Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

FDG316P General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDG316P Datasheet (70.80 KB)

FDG316P Datasheet Preview — Preview of FDG316P PDF

Datasheet Details

Part number:

FDG316P

Manufacturer:

Fairchild Semiconductor

File Size:

70.80 KB

Description:

P-channel logic level powertrench mosfet.

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TAGS

FDG316P P-Channel Logic Level PowerTrench MOSFET Fairchild Semiconductor

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FDG316P Features

FDG316P General Description

Datasheet Details

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Description:

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