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FDG311N

N-Channel 2.5V Specified PowerTrench MOSFET

FDG311N Features

* 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.

* Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

FDG311N General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDG311N Datasheet (89.54 KB)

Preview of FDG311N PDF

Datasheet Details

Part number:

FDG311N

Manufacturer:

Fairchild Semiconductor

File Size:

89.54 KB

Description:

N-channel 2.5v specified powertrench mosfet.

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FDG311N N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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