FDG311N - N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

FDG311N Datasheet Preview — Preview of FDG311N PDF

Datasheet Details

Part number	FDG311N
Manufacturer	Fairchild ↗ Semiconductor
File Size	89.54 KB
Description	N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDG311N_FairchildSemiconductor.pdf

FDG311N Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |