FDG311N Datasheet, Mosfet, Fairchild Semiconductor

FDG311N Features

• Mosfet
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
• Low gate charge (3nC typical). High performance trench technology

PDF File Details

Part number:

FDG311N

Manufacturer:

Fairchild Semiconductor

File Size:

89.54kb

Download:

📄 Datasheet

Description:

N-channel 2.5v specified powertrench mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m

FDG311N Application

• Applications Features
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
• Low

TAGS

FDG311N

Fairchild Semiconductor

📁 Related Datasheet

FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Sem.

FDG312P - P-Channel MOSFET (ON Semiconductor)
FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto.

FDG313N - N-Channel Digital FET (Fairchild Semiconductor)
FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc.

FDG313N - N-Channel Digital FET (ON Semiconductor)
FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's prop.

FDG314P - Digital FET/ P-Channel (Fairchild Semiconductor)
FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairc.

FDG315N - N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchil.

FDG315N - N-Channel MOSFET (ON Semiconductor)
MOSFET– N-Channel, Logic Level, POWERTRENCH) FDG315N General Description This N−Channel Logic Level MOSFET is produced using ON Semiconductor’s adva.

FDG316P - P-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fair.

FDG316P - P-Channel MOSFET (ON Semiconductor)
MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s adva.

FDG326P - P-Channel 1.8V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s .