FDG311N N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General .
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number: FDG311N
Manufacturer: Fairchild Semiconductor
File Size: 89.54 KB
Datasheet: FDG311N_FairchildSemiconductor.pdf
Description: N-Channel 2.5V Specified PowerTrench MOSFET

Features

* 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.

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FDG311N N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDG311N-like datasheet