Part number:
FDG311N
Manufacturer:
Fairchild Semiconductor
File Size:
89.54 KB
Description:
N-channel 2.5v specified powertrench mosfet.
FDG311N_FairchildSemiconductor.pdf
Datasheet Details
Part number:
FDG311N
Manufacturer:
Fairchild Semiconductor
File Size:
89.54 KB
Description:
N-channel 2.5v specified powertrench mosfet.
FDG311N, N-Channel 2.5V Specified PowerTrench MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics application
FDG311N Features
* 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
* Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications
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