FDG314P Datasheet, P-channel, Fairchild Semiconductor

FDG314P Features

• P-channel
• -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
• Very low gate drive requirements allowing direct operation in 3V

PDF File Details

Part number:

FDG314P

Manufacturer:

Fairchild Semiconductor

File Size:

84.38kb

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📄 Datasheet

Description:

Digital fet/ p-channel. This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, D

FDG314P Application

• Applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5

TAGS

FDG314P

Fairchild Semiconductor

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