FDG314P Datasheet - Fairchild Semiconductor

FDG314P Digital FET/ P-Channel

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery .

FDG314P Features

* -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.

* Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standa

FDG314P_FairchildSemiconductor.pdf