FDG314P Digital FET/ P-Channel

Fairchild Semiconductor

Description

FDG314P July 2000 FDG314P Digital FET, P-Channel General .
This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDG314P
Manufacturer: Fairchild Semiconductor
File Size: 84.38 KB
Datasheet: FDG314P_FairchildSemiconductor.pdf
Description: Digital FET/ P-Channel

Features

* -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
* Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standa

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FDG314P Digital FET P-Channel Fairchild Semiconductor

Fairchild Semiconductor FDG314P-like datasheet