Part number:
FDG314P
Manufacturer:
Fairchild Semiconductor
File Size:
84.38 KB
Description:
Digital fet/ p-channel.
FDG314P_FairchildSemiconductor.pdf
Datasheet Details
Part number:
FDG314P
Manufacturer:
Fairchild Semiconductor
File Size:
84.38 KB
Description:
Digital fet/ p-channel.
FDG314P, Digital FET/ P-Channel
This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize onstate resistance at low gate drive conditions.
This device is designed especially for battery
FDG314P Features
* -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
* Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standa
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