FDG314P - Digital FET/ P-Channel

Fairchild Semiconductor

Datasheet Details

Part number	FDG314P
Manufacturer	Fairchild ↗ Semiconductor
File Size	84.38 KB
Description	Digital FET/ P-Channel
Datasheet	FDG314P_FairchildSemiconductor.pdf

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology.

-0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |