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FDG312P Datasheet - Fairchild Semiconductor

FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics application

FDG312P Features

* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.

* Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

* Load switch

FDG312P_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDG312P

Manufacturer:

Fairchild Semiconductor

File Size:

206.75 KB

Description:

P-channel 2.5v specified powertrench mosfet.

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