FDG312P Datasheet - Fairchild Semiconductor

FDG312P P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDG312P Features

* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.

* Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

* Load switch

FDG312P_FairchildSemiconductor.pdf