FDG312P Datasheet, Mosfet, Fairchild Semiconductor

FDG312P Features

• Mosfet
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.
• Low gate charge (3.3 nC typical). High performance trench technology for

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Part number:

FDG312P

Manufacturer:

Fairchild Semiconductor

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206.75kb

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📄 Datasheet

Description:

P-channel 2.5v specified powertrench mosfet. This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m

FDG312P Application

• Applications Features
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.
• Low gate cha

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FDG312P

Fairchild Semiconductor

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