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FDG312P

P-Channel 2.5V Specified PowerTrench MOSFET

FDG312P Features

* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.

* Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

* Load switch

FDG312P General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDG312P Datasheet (206.75 KB)

Preview of FDG312P PDF

Datasheet Details

Part number:

FDG312P

Manufacturer:

Fairchild Semiconductor

File Size:

206.75 KB

Description:

P-channel 2.5v specified powertrench mosfet.

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TAGS

FDG312P P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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