FDG312P P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General .
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number: FDG312P
Manufacturer: Fairchild Semiconductor
File Size: 206.75 KB
Datasheet: FDG312P_FairchildSemiconductor.pdf
Description: P-Channel 2.5V Specified PowerTrench MOSFET

Features

* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.

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FDG312P P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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