FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

FDG312P Datasheet Preview — Preview of FDG312P PDF

Datasheet Details

Part number	FDG312P
Manufacturer	Fairchild ↗ Semiconductor
File Size	206.75 KB
Description	P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDG312P_FairchildSemiconductor.pdf

FDG312P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.
Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |