FDG327N Datasheet - ON Semiconductor

FDG327N N-Channel MOSFET

This N *Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a.

FDG327N Features

* 1.5 A, 20 V

* RDS(ON) = 90 mW @ VGS = 4.5 V

* RDS(ON) = 100 mW @ VGS = 2.5 V

* RDS(ON) = 140 mW @ VGS = 1.8 V

* Fast Switching Speed

* Low Gate Charge (4.5 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* H

FDG327N-ONSemiconductor.pdf