FDG327N N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 20 V FDG327N General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDG327N
Manufacturer: ON Semiconductor ↗
File Size: 310.36 KB
Datasheet: FDG327N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.5 A, 20 V
* RDS(ON) = 90 mW @ VGS = 4.5 V
* RDS(ON) = 100 mW @ VGS = 2.5 V
* RDS(ON) = 140 mW @ VGS = 1.8 V
* Fast Switching Speed
* Low Gate Charge (4.5 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* H

Applications

* DC/DC Converter
* Load Switch
* Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain
* Source Voltage 20 V VGSS Gate
* Source Voltage ±8 V ID Drain Current Continuous 1.5 A (Note 1

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FDG327N N-Channel MOSFET ON Semiconductor

ON Semiconductor FDG327N-like datasheet