FDG6301N - Dual N-Channel Digital FET

ON Semiconductor

FDG6301N Datasheet Preview — Preview of FDG6301N PDF

Datasheet Details

Part number	FDG6301N
Manufacturer	ON Semiconductor ↗
File Size	233.56 KB
Description	Dual N-Channel Digital FET
Datasheet	FDG6301N-ONSemiconductor.pdf

FDG6301N Product details

Description

These dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Body Model).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Jan 23, 2023 |