FDG6301N Dual N-Channel Digital FET

ON Semiconductor

Description

Digital FET, Dual N-Channel FDG6301N General .
These dual N. Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS te.

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Datasheet Specifications

Part number: FDG6301N
Manufacturer: ON Semiconductor ↗
File Size: 233.56 KB
Datasheet: FDG6301N-ONSemiconductor.pdf
Description: Dual N-Channel Digital FET

Features

* 25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
* Gate
* Source Zener for ESD Ruggedness (>6 kV Human Body Model)
* Compact In

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FDG6301N Dual N-Channel Digital FET ON Semiconductor

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