Part number:
FDG6301N
Manufacturer:
File Size:
233.56 KB
Description:
Dual n-channel digital fet.
Datasheet Details
Part number:
FDG6301N
Manufacturer:
File Size:
233.56 KB
Description:
Dual n-channel digital fet.
FDG6301N, Dual N-Channel Digital FET
These dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on *state resistance.
This device has been designed especially for
FDG6301N Features
* 25 V, 0.22 A Continuous, 0.65 A Peak RDS(ON) = 4 W @ VGS = 4.5 V RDS(ON) = 5 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
* Gate
* Source Zener for ESD Ruggedness (>6 kV Human Body Model)
* Compact In
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