FDG6301N Datasheet - ON Semiconductor

FDG6301N Dual N-Channel Digital FET

These dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance. This device has been designed especially for .

FDG6301N Features

* 25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)

* Gate

* Source Zener for ESD Ruggedness (>6 kV Human Body Model)

* Compact In

FDG6301N-ONSemiconductor.pdf