FDG329N 20V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDG329N
Manufacturer: Fairchild Semiconductor
File Size: 79.85 KB
Datasheet: FDG329N_FairchildSemiconductor.pdf
Description: 20V N-Channel PowerTrench MOSFET

Features

* 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V
* Fast switching speed
* Low gate charge (3.3 nC typical)
* High performance trench technology for extremely low RDS(ON)

Applications

* DC/DC converter Power management Load switch S D D G Pin 1 1 2 D D 6 5 4 SC70-6 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25 C unless otherwise noted

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FDG329N 20V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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