FDG329N Datasheet - Fairchild Semiconductor

FDG329N 20V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small p.

FDG329N Features

* 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V

* Fast switching speed

* Low gate charge (3.3 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability. Applications

FDG329N_FairchildSemiconductor.pdf