FDG313N Datasheet, Fet, ON Semiconductor

FDG313N Features

• Fet
• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
• Low gate charge (1.64 nC typical)
• Very low level gate drive requirements allow

PDF File Details

Part number:

FDG313N

Manufacturer:

ON Semiconductor ↗

File Size:

171.37kb

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📄 Datasheet

Description:

N-channel digital fet. This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology

FDG313N Application

• Applications as a replacement for bipolar digital transistor and small signal MOSFET. Applications
• Load switch
• Battery protectio

TAGS

FDG313N

ON Semiconductor

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