Part number:
FDG313N
Manufacturer:
File Size:
171.37 KB
Description:
N-channel digital fet.
Datasheet Details
Part number:
FDG313N
Manufacturer:
File Size:
171.37 KB
Description:
N-channel digital fet.
FDG313N, N-Channel Digital FET
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a rep
FDG313N Features
* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical)
* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
* Gate-Source Zener for ESD ruggedness (>6kV Human Bo
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