FDG313N Datasheet - ON Semiconductor

FDG313N N-Channel Digital FET

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a rep.

FDG313N Features

* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.

* Low gate charge (1.64 nC typical)

* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).

* Gate-Source Zener for ESD ruggedness (>6kV Human Bo

FDG313N-ONSemiconductor.pdf