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FDG313N Datasheet - ON Semiconductor

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Datasheet Details

Part number:

FDG313N

Manufacturer:

ON Semiconductor ↗

File Size:

171.37 KB

Description:

N-channel digital fet.

FDG313N, N-Channel Digital FET

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a rep

FDG313N Features

* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.

* Low gate charge (1.64 nC typical)

* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).

* Gate-Source Zener for ESD ruggedness (>6kV Human Bo

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