FDG313N N-Channel Digital FET

ON Semiconductor

Description

FDG313N FDG313N Digital FET, N-Channel General .
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

📥 Download Datasheet

FDG313N Datasheet Preview — Preview of FDG313N PDF

Datasheet Specifications

Part number: FDG313N
Manufacturer: ON Semiconductor ↗
File Size: 171.37 KB
Datasheet: FDG313N-ONSemiconductor.pdf
Description: N-Channel Digital FET

Features

* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical)
* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
* Gate-Source Zener for ESD ruggedness (>6kV Human Bo

Applications

* as a replacement for bipolar digital transistor and small signal MOSFET. Applications
* Load switch
* Battery protection

FDG313N Distributors

📁 Related Datasheet

FDG311N FDG312P FDG314P FDG315N FDG316P FDG326P

📌 All Tags

FDG313N N-Channel Digital FET ON Semiconductor

ON Semiconductor FDG313N-like datasheet