FDG327N Datasheet - Fairchild Semiconductor

FDG327N 20V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small p.

FDG327N Features

* 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V

* Fast switching speed

* Low gate charge (4.5 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handli

FDG327N_FairchildSemiconductor.pdf