FDG316P Datasheet (ON Semiconductor)

FDG316P, P-Channel MOSFET

This P *Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered app

FDG316P Features

* 1.6 A,

* 30 V

* RDS(ON) = 0.19 W @ VGS =

* 10 V

* RDS(ON) = 0.30 W @ VGS =

* 4.5 V

* Low Gate Charge (3.5 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* Compact Industry Standard SC70