Datasheet4U Logo Datasheet4U.com

FDG1024NZ Datasheet - ON Semiconductor

FDG1024NZ - Dual N-Channel MOSFET

This dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

This device has been designed especially for l

FDG1024NZ Features

* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A

* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A

* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A

* Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A

* HBM ESD Protection Level > 2 kV (Note 3)

* Very Lo

FDG1024NZ-ONSemiconductor.pdf

Preview of FDG1024NZ PDF
FDG1024NZ Datasheet Preview Page 2 FDG1024NZ Datasheet Preview Page 3

Datasheet Details

Part number:

FDG1024NZ

Manufacturer:

ON Semiconductor ↗

File Size:

273.13 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

📌 All Tags