Part number:
FDG1024NZ
Manufacturer:
File Size:
273.13 KB
Description:
Dual n-channel mosfet.
Datasheet Details
This dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on *state resistance.
This device has been designed especially for l
FDG1024NZ Features
* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A
* HBM ESD Protection Level > 2 kV (Note 3)
* Very Lo
Datasheet Details
FDG1024NZ
273.13 KB
Dual n-channel mosfet.
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