FDG1024NZ Datasheet, Mosfet, ON Semiconductor

FDG1024NZ Features

  • Mosfet
  • Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
  • Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
  • Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
  • M

PDF File Details

Part number:

FDG1024NZ

Manufacturer:

ON Semiconductor ↗

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273.13kb

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📄 Datasheet

Description:

Dual n-channel mosfet. This dual N

  • Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell

  • Datasheet Preview: FDG1024NZ 📥 Download PDF (273.13kb)
    Page 2 of FDG1024NZ Page 3 of FDG1024NZ

    FDG1024NZ Application

    • Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET

    TAGS

    FDG1024NZ
    Dual
    N-Channel
    MOSFET
    ON Semiconductor

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    Stock and price

    part
    onsemi
    MOSFET 2N-CH 20V 1.2A SC88
    DigiKey
    FDG1024NZ
    192 In Stock
    Qty : 1000 units
    Unit Price : $0.28
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