FDG1024NZ Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ .
This dual N. Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS tec.

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Datasheet Specifications

Part number: FDG1024NZ
Manufacturer: ON Semiconductor ↗
File Size: 273.13 KB
Datasheet: FDG1024NZ-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A
* HBM ESD Protection Level > 2 kV (Note 3)
* Very Lo

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FDG1024NZ Dual N-Channel MOSFET ON Semiconductor

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