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FDG312P P-Channel MOSFET

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Description

FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General .
Features This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the o.

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Applications

* Applications
* Load switch
* Battery protection
* Power management
* -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V.
* Low gate charge (3.3 nC typical).
* High performance trench technology for extremely low RDS(ON).

FDG312P Distributors

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FDG312P P-Channel MOSFET ON Semiconductor
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