FDG332PZ MOSFET

Fairchild Semiconductor

Description

FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm .
This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process.

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Datasheet Specifications

Part number: FDG332PZ
Manufacturer: Fairchild Semiconductor
File Size: 241.13 KB
Datasheet: FDG332PZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
* Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
* Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
* Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A
* Very low level gate drive requirements allowing operation in 1.

Applications

* Applications
* Battery management
* Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power

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FDG332PZ MOSFET Fairchild Semiconductor

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