FDG332PZ Datasheet, Mosfet, Fairchild Semiconductor

FDG332PZ Features

• Mosfet
• Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
• Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
• Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
• Max r

PDF File Details

Part number:

FDG332PZ

Manufacturer:

Fairchild Semiconductor

File Size:

241.13kb

Download:

📄 Datasheet

Description:

Mosfet. This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management

FDG332PZ Application

• Applications Applications
• Battery management
• Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA

TAGS

FDG332PZ

Fairchild Semiconductor

📁 Related Datasheet

FDG330P - P-Channel 1.8V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDG311N - N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem.

FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Sem.

FDG312P - P-Channel MOSFET (ON Semiconductor)
FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto.

FDG313N - N-Channel Digital FET (Fairchild Semiconductor)
FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc.

FDG313N - N-Channel Digital FET (ON Semiconductor)
FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's prop.

FDG314P - Digital FET/ P-Channel (Fairchild Semiconductor)
FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairc.

FDG315N - N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchil.

FDG315N - N-Channel MOSFET (ON Semiconductor)
MOSFET– N-Channel, Logic Level, POWERTRENCH) FDG315N General Description This N−Channel Logic Level MOSFET is produced using ON Semiconductor’s adva.

FDG316P - P-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fair.