FDG332PZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDG332PZ
Manufacturer	Fairchild Semiconductor
File Size	241.13 KB
Description	MOSFET
Datasheet	FDG332PZ Datasheet
Additional preview pages of the FDG332PZ datasheet.

Product details

Description

This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. Battery management Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage

Features

Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A.
Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A.
Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A.
Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A.
Very low level gate drive requirements allowing operation in 1.5V circuits.
Very small package outline SC70-6.
RoHS Compliant General.

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Published: Jan 11, 2017 |