FDZ206P Datasheet, Powertrench, Fairchild Semiconductor

FDZ206P Features

• Powertrench
• 
    –13 A,
    –20 V. RDS(ON) = 9.5 mΩ @ VGS =
    –4.5 V RDS(ON) = 14.5 mΩ @ VGS =
    –2.5 V
• Occupies only 14 mm2 o

PDF File Details

Part number:

FDZ206P

Manufacturer:

Fairchild Semiconductor

File Size:

214.54kb

Download:

📄 Datasheet

Description:

P-channel 2.5v specified powertrench. Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB

FDZ206P Application

• Applications
• Battery management
• Load switch
• Battery protection D D D D D S S S G D S S S S D S S S S D S S S S D

TAGS

FDZ206P

Fairchild Semiconductor

📁 Related Datasheet

FDZ201N - N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET (Fairchild Semiconductor)
FDZ201N November 1999 ADVANCE INFORMATION FDZ201N N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanc.

FDZ202P - P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET (Fairchild Semiconductor)
FDZ202P November 1999 ADVANCE INFORMATION FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanc.

FDZ203N - N-Channel 2.5V Specified PowerTrench BGA MOSFET (Fairchild Semiconductor)
FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerT.

FDZ2040L - Integrated Load Switch (Fairchild Semiconductor)
FDZ2040L — Integrated Load Switch June 2013 FDZ2040L Integrated Load Switch Features  Optimized for Low-Voltage Core ICs in Portable Systems  Very.

FDZ204P - P-Channel 2.5V Specified PowerTrench (Fairchild Semiconductor)
FDZ204P March 2003 FDZ204P P-Channel 2.5V Specified PowerTrench   BGA MOSFET Features • –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 .

FDZ208P - P-Channel 30 Volt PowerTrench (Fairchild Semiconductor)
FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 m.

FDZ209N - 60V N-Channel PowerTrench BGA MOSFET (Fairchild Semiconductor)
FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced PowerTrench process with state-o.

FDZ2551N - Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET (Fairchild Semiconductor)
FDZ2551N November 1999 ADVANCE INFORMATION FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s.

FDZ2552P - Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET (Fairchild Semiconductor)
FDZ2552P November 1999 ADVANCE INFORMATION FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s.

FDZ2553N - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench (Fairchild Semiconductor)
FDZ2553N February 2003 FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s.