FGB30N6S2D Datasheet - Fairchild Semiconductor

FGB30N6S2D, 600V/ SMPS II Series N-Channel IGBT

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D July 2001 FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM.
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs.

Features

* 100kHz Operation at 390V, 14A
* 200kHZ Operation at 390V, 9A
* 600V Switching SOA Capability
* Typical Fall Time
* . 90ns at TJ = 125oC
* Low Gate Charge
* . . . . 23nC at VGE = 15V
* Low Plateau Voltage
* . . .6

Applications

* where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
* Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits

FGB30N6S2D_FairchildSemiconductor.pdf