FGL60N100D Datasheet, Igbt, Fairchild Semiconductor

FGL60N100D Features

• Igbt
• High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appl

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FGL60N100D

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

Igbt. Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar

FGL60N100D Application

• Applications Features
• High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input I

TAGS

FGL60N100D

Fairchild Semiconductor

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