FGL60N170D Datasheet, Igbt, Fairchild Semiconductor

FGL60N170D Features

  • Igbt
  • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home App

PDF File Details

Part number:

FGL60N170D

Manufacturer:

Fairchild Semiconductor

File Size:

558.96kb

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📄 Datasheet

Description:

Igbt. Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Ind

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FGL60N170D Application

  • Applications Features
  • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input

TAGS

FGL60N170D
IGBT
Fairchild Semiconductor

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