FJD3076 Datasheet - Fairchild Semiconductor

FJD3076 NPN Epitaxial Silicon Transistor

FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55 .

FJD3076 Datasheet (47.40 KB)