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FJD5553 NPN Transistor

FJD5553 Description

isc Silicon NPN Power Transistor .
Wide Safe Operation Area. High Voltage Capability. Fast-switching speed. 100% avalanche tested. Minimum Lot-to-Lot variations for.

FJD5553 Applications

* Electronic Ballast
* Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current-Continuous 3 A ICP Collector Current

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Datasheet Details

Part number
FJD5553
Manufacturer
INCHANGE
File Size
192.18 KB
Datasheet
FJD5553-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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