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FJD5555 NPN Transistor

FJD5555 Description

isc Silicon NPN Power Transistor FJD5555 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min. Fast Speed Switching. Wide safe operating Area. 100% avalanche tested.

FJD5555 Applications

* Designed for electronic ballast application ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak

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Datasheet Details

Part number
FJD5555
Manufacturer
INCHANGE
File Size
193.62 KB
Datasheet
FJD5555-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE FJD5555-like datasheet