FLLD261
Fairchild Semiconductor
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High conductance low leakage diode.
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FLLD261 - SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR
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SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR
ISSUE 2 SEPTEMBER 1995 7
FLLD261
2
DIODE PIN CONNECTION
1 3
3
1
2
SOT23
PART MARKING DETAIL.
FLLD263 - SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR
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SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR
ISSUE 2 JANUARY 1996 7
1
FLLD263
2
DIODE PIN CONNECTION
1 3
2
3
SOT23
PART MARKING DE.
FLLD258 - SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR
(Zetex Semiconductors)
SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR
ISSUE 2 SEPTEMBER 1995 7
1
FLLD258
2
1 3
2
3
SOT23
PART MARKING DETAIL D58
ABSOL.
FLL100 - Capacitor
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FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
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FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
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• • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47.
FLL120MK - L-Band Medium & High Power GaAs FET
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FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability
• Hermeticall.
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FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
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FLL200IB-1, FLL200IB-2, FLL200IB-3
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• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.