FQP19N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP19N10 August 2000 QFET FQP19N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQP19N10
Manufacturer: Fairchild Semiconductor
File Size: 591.14 KB
Datasheet: FQP19N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO

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FQP19N10 100V N-Channel MOSFET Fairchild Semiconductor

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