FQP19N20 200V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP19N20 * N-Channel QFET® MOSFET FQP19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQP19N20
Manufacturer: Fairchild Semiconductor
File Size: 668.32 KB
Datasheet: FQP19N20_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* 19.4 A, 200 V, RDS(on) = 150 mΩ (Max. ) @ VGS = 10 V, ID = 9.7 A
* Low Gate Charge (Typ. 31 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P

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FQP19N20 200V N-Channel MOSFET Fairchild Semiconductor

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