FQP19N20 Datasheet - Fairchild Semiconductor

FQP19N20 200V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP19N20 Features

* 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A

* Low Gate Charge (Typ. 31 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P

FQP19N20 Datasheet (668.32 KB)

FQP19N20 Datasheet Preview — Preview of FQP19N20 PDF

Datasheet Details

Part number:

FQP19N20

Manufacturer:

Fairchild Semiconductor

File Size:

668.32 KB

Description:

200v n-channel mosfet.

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FQP19N20 200V N-Channel MOSFET Fairchild Semiconductor

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