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FQP20N06 - 60V N-Channel MOSFET

FQP20N06 Description

FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP20N06 Features

* 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

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60V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP20N06-like datasheet