FQP27P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQP27P06 P-Channel QFET® MOSFET March 2013 FQP27P06 P-Channel QFET® MOSFET - 60 V, - 27 A, 70 m .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQP27P06
Manufacturer: Fairchild Semiconductor
File Size: 415.31 KB
Datasheet: FQP27P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* - 27 A, - 60 V, RDS(on) = 70 m (Max. ) @ VGS = - 10 V, ID = - 13.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
* 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless oth

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FQP27P06 60V P-Channel MOSFET Fairchild Semiconductor

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