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FQP70N10

100V N-Channel MOSFET

FQP70N10 Features

* 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " "

FQP70N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP70N10 Datasheet (636.43 KB)

Preview of FQP70N10 PDF

Datasheet Details

Part number:

FQP70N10

Manufacturer:

Fairchild Semiconductor

File Size:

636.43 KB

Description:

100v n-channel mosfet.

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FQP70N10 100V N-Channel MOSFET Fairchild Semiconductor

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