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FQP7N80C N-Channel MOSFET

FQP7N80C Description

FQP7N80C / FQPF7N80C * N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP7N80C Features

* 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A
* Low Gate Charge (Typ. 27 nC)
* Low Crss (Typ. 10 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai

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N-Channel MOSFET Fairchild Semiconductor
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