FQP7N80C - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP7N80C
Manufacturer	Fairchild Semiconductor
File Size	871.30 KB
Description	N-Channel MOSFET
Datasheet	FQP7N80C_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A.
Low Gate Charge (Typ. 27 nC).
Low Crss (Typ. 10 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current.

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Published: Sep 14, 2006 |