FQPF10N60C Datasheet - Fairchild Semiconductor

FQPF10N60C - 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse.

FQPF10N60C Features

* 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A

* Low Gate Charge (Typ. 44 nC)

* Low Crss (Typ. 18 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID

FQPF10N60C_FairchildSemiconductor.pdf