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FQPF17N08

80V N-Channel MOSFET

FQPF17N08 Features

* 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " "

FQPF17N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQPF17N08 Datasheet (600.02 KB)

Preview of FQPF17N08 PDF

Datasheet Details

Part number:

FQPF17N08

Manufacturer:

Fairchild Semiconductor

File Size:

600.02 KB

Description:

80v n-channel mosfet.

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TAGS

FQPF17N08 80V N-Channel MOSFET Fairchild Semiconductor

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