FQPF19N10 Datasheet (Fairchild Semiconductor)

FQPF19N10, 100V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF19N10 Features

* 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 32 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted