FQPF19N10 - 100V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF19N10
Manufacturer	Fairchild Semiconductor
File Size	1.30 MB
Description	100V N-Channel MOSFET
Datasheet	FQPF19N10_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

13.6 A, 100 V, RDS(on)=100 mΩ(Max. ) @VGS=10 V, ID=6.8 A.
Low Gate Charge (Typ. 19 nC).
Low Crss (Typ. 32 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-So.

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Published: Apr 1, 2005 |