FQPF19N10

100V N-Channel MOSFET

Fairchild Semiconductor

FQPF19N10 Features

* 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 32 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted

FQPF19N10 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF19N10 Datasheet (1.30 MB)

FQPF19N10 Datasheet Preview — Preview of FQPF19N10 PDF

Datasheet Details

Part number:

FQPF19N10

Manufacturer:

Fairchild Semiconductor

File Size:

1.30 MB

Description:

100v n-channel mosfet.

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FQPF19N10 100V N-Channel MOSFET Fairchild Semiconductor

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FQPF19N10 Features

FQPF19N10 General Description

Datasheet Details

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Description:

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