FQPF19N10 Datasheet, Mosfet, Fairchild Semiconductor

FQPF19N10 Features

• Mosfet
• 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 32 pF)
• 100% Avalanche Tested
• 175°C

PDF File Details

Part number:

FQPF19N10

Manufacturer:

Fairchild Semiconductor

File Size:

1.30MB

Download:

📄 Datasheet

Description:

100v n-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQPF19N10 Application

• Applications Features
• 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss

TAGS

FQPF19N10

Fairchild Semiconductor

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