FQPF19N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQPF19N10 * N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.6 A, 100 mΩ .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQPF19N10
Manufacturer: Fairchild Semiconductor
File Size: 1.30 MB
Datasheet: FQPF19N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 13.6 A, 100 V, RDS(on)=100 mΩ(Max. ) @VGS=10 V, ID=6.8 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 32 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted

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FQPF19N10 100V N-Channel MOSFET Fairchild Semiconductor

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