FQPF2N60C 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP2N60C / FQPF2N60C * N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQPF2N60C
Manufacturer: Fairchild Semiconductor
File Size: 1.42 MB
Datasheet: FQPF2N60C_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 2 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 1 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-

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FQPF2N60C 600V N-Channel MOSFET Fairchild Semiconductor

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