Datasheet Details
- Part number
- FQPF2N60C
- Manufacturer
- Fairchild Semiconductor
- File Size
- 1.42 MB
- Datasheet
- FQPF2N60C_FairchildSemiconductor.pdf
- Description
- 600V N-Channel MOSFET
FQPF2N60C Description
FQP2N60C / FQPF2N60C * N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
FQPF2N60C Features
* 2 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 1 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS
Drain-
📁 Related Datasheet
📌 All Tags
FQPF2N60C Stock/Price