FQPF5N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

4.5 A, 600 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V, ID = 2.25 A.
Low Gate Charge (Typ. 15 nC).
Low Crss (Typ. 6.5 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche C.

📁 Related Datasheet

📌 All Tags

Fairchild Semiconductor FQPF5N60C-like datasheet

FQPF5N60C Stock/Price