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FQPF6N80CT, FQPF6N80C Datasheet - Fairchild Semiconductor

FQPF6N80CT 800V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF6N80CT Features

* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A

* Low Gate Charge (Typ. 21 nC)

* Low Crss (Typ. 8 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai

FQPF6N80C-FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FQPF6N80CT, FQPF6N80C. Please refer to the document for exact specifications by model.
FQPF6N80CT Datasheet Preview Page 2 FQPF6N80CT Datasheet Preview Page 3

Datasheet Details

Part number:

FQPF6N80CT, FQPF6N80C

Manufacturer:

Fairchild Semiconductor

File Size:

0.97 MB

Description:

800v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FQPF6N80CT, FQPF6N80C.
Please refer to the document for exact specifications by model.

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FQPF6N80CT FQPF6N80C 800V N-Channel MOSFET Fairchild Semiconductor

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