FQPF6N80C-FairchildSemiconductor.pdf
Datasheet Details
Part number:
FQPF6N80CT, FQPF6N80C
Manufacturer:
Fairchild Semiconductor
File Size:
0.97 MB
Description:
800v n-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: FQPF6N80CT, FQPF6N80C.
Please refer to the document for exact specifications by model.
FQPF6N80CT, FQPF6N80C, 800V N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQPF6N80CT Features
* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
* Low Gate Charge (Typ. 21 nC)
* Low Crss (Typ. 8 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai
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