Description
FQP6N80C / FQPF6N80C * N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V, ID = 2.75 A
* Low Gate Charge (Typ. 21 nC)
* Low Crss (Typ. 8 pF)
* 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS
Drai