FQPF6N80T N-Channel MOSFET

Fairchild Semiconductor

Description

FQPF6N80T * N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.95 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

📥 Download Datasheet

FQPF6N80T Datasheet Preview — Preview of FQPF6N80T PDF

Datasheet Specifications

Part number: FQPF6N80T
Manufacturer: Fairchild Semiconductor
File Size: 458.02 KB
Datasheet: FQPF6N80T-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max. ) @ VGS = 10 V, ID = 1.65 A
* Low Gate Charge (Typ. 31 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested
* 100% Package Isolation Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sy

FQPF6N80T Distributors

📁 Related Datasheet

FQPF10N20C FQPF10N60 FQPF10N65 FQPF12N50 FQPF12N60 FQPF12N60C

📌 All Tags

FQPF6N80T N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQPF6N80T-like datasheet