FQPF6N80T Datasheet (Fairchild Semiconductor)

FQPF6N80T, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF6N80T Features

* 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max.) @ VGS = 10 V, ID = 1.65 A

* Low Gate Charge (Typ. 31 nC)

* Low Crss (Typ. 14 pF)

* 100% Avalanche Tested

* 100% Package Isolation Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sy