FQPF9N50C Datasheet - Fairchild Semiconductor

FQPF9N50C 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQPF9N50C Features

* 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 24 pF)

* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage

FQPF9N50C Datasheet (850.09 KB)

FQPF9N50C Datasheet Preview — Preview of FQPF9N50C PDF

Datasheet Details

Part number:

FQPF9N50C

Manufacturer:

Fairchild Semiconductor

File Size:

850.09 KB

Description:

500v n-channel mosfet.

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FQPF9N50C 500V N-Channel MOSFET Fairchild Semiconductor

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