FQPF9P25 - 250V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF9P25
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.19 MB
Description	250V P-Channel MOSFET
Datasheet	FQPF9P25_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-6 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -3 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 27 pF).
100% Avalanche Tested S G GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche C.

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Published: Apr 1, 2005 |