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FQT13N06

60V N-Channel MOSFET

FQT13N06 Features

* 2.8A, 60V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IA

FQT13N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQT13N06 Datasheet (688.63 KB)

Preview of FQT13N06 PDF

Datasheet Details

Part number:

FQT13N06

Manufacturer:

Fairchild Semiconductor

File Size:

688.63 KB

Description:

60v n-channel mosfet.

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FQT13N06 60V N-Channel MOSFET Fairchild Semiconductor

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