FQT13N06 - 60V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQT13N06
Manufacturer	Fairchild ↗ Semiconductor
File Size	688.63 KB
Description	60V N-Channel MOSFET
Datasheet	FQT13N06_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

2.8A, 60V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT13N06 6.

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Published: Apr 1, 2005 |