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FQT2P25

250V P-Channel MOSFET

FQT2P25 Features

* -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A

* Low Gate Charge (Typ. 6.5 nC)

* Low Crss (Typ. 6.5 pF)

* 100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS E

FQT2P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQT2P25 Datasheet (896.68 KB)

Preview of FQT2P25 PDF

Datasheet Details

Part number:

FQT2P25

Manufacturer:

Fairchild Semiconductor

File Size:

896.68 KB

Description:

250v p-channel mosfet.

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FQT2P25 250V P-Channel MOSFET Fairchild Semiconductor

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