FQT2P25 250V P-Channel MOSFET

Fairchild Semiconductor

Description

FQT2P25 * P-Channel QFET® MOSFET FQT2P25 P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω November 2013 .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQT2P25
Manufacturer: Fairchild Semiconductor
File Size: 896.68 KB
Datasheet: FQT2P25_FairchildSemiconductor.pdf
Description: 250V P-Channel MOSFET

Features

* -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max. ) @ VGS = -10 V, ID = -0.275 A
* Low Gate Charge (Typ. 6.5 nC)
* Low Crss (Typ. 6.5 pF)
* 100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS E

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FQT2P25 250V P-Channel MOSFET Fairchild Semiconductor

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