FQT2P25 - 250V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQT2P25
Manufacturer	Fairchild ↗ Semiconductor
File Size	896.68 KB
Description	250V P-Channel MOSFET
Datasheet	FQT2P25_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-0.55 A, -250 V, RDS(on) = 4.0 Ω (Max. ) @ VGS = -10 V, ID = -0.275 A.
Low Gate Charge (Typ. 6.5 nC).
Low Crss (Typ. 6.5 pF).
100% Avalanche Tested D SOT-223 S D G D G D S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulse.

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Published: Apr 1, 2005 |