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FQT1N80

N-Channel MOSFET

FQT1N80 Features

* RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A

* Low gate charge ( Typ. 5.5nC)

* Low Crss ( Typ. 2.7pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant ® Description These N-Channel enhancement mode power

FQT1N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQT1N80 Datasheet (830.55 KB)

Preview of FQT1N80 PDF

Datasheet Details

Part number:

FQT1N80

Manufacturer:

Fairchild Semiconductor

File Size:

830.55 KB

Description:

N-channel mosfet.

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FQT1N80 N-Channel MOSFET Fairchild Semiconductor

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