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FQT1N80 N-Channel MOSFET

FQT1N80 Description

FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQT1N80 Features

* RDS(on) = 15.5Ω (Typ. )@ VGS = 10V, ID = 0.1A
* Low gate charge ( Typ. 5.5nC)
* Low Crss ( Typ. 2.7pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQT1N80-like datasheet