FQT4N20 - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQT4N20
Manufacturer	Fairchild ↗ Semiconductor
File Size	629.02 KB
Description	200V N-Channel MOSFET
Datasheet	FQT4N20_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 5.0 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT4N20.

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Published: Apr 1, 2005 |