FQT4N25 - 250V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQT4N25
Manufacturer	Fairchild ↗ Semiconductor
File Size	653.62 KB
Description	250V N-Channel MOSFET
Datasheet	FQT4N25_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

0.83A, 250V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 4.3 nC) Low Crss ( typical 4.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT4N25.

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Published: Apr 1, 2005 |