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FQT4N25

250V N-Channel MOSFET

FQT4N25 Features

* 0.83A, 250V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 4.3 nC) Low Crss ( typical 4.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

FQT4N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQT4N25 Datasheet (653.62 KB)

Preview of FQT4N25 PDF

Datasheet Details

Part number:

FQT4N25

Manufacturer:

Fairchild Semiconductor

File Size:

653.62 KB

Description:

250v n-channel mosfet.

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FQT4N25 250V N-Channel MOSFET Fairchild Semiconductor

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