H11G1 Datasheet (Fairchild Semiconductor) - HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

H11G1, HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

The H11GX series are photodarlington-type optically coupled optocouplers.

These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

H11G1 H11

H11G1 Features

* High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3

* High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA

* Low leakage current at elevated temperature (maximum 100 µA at 80°C)

* Underwriters Laboratory (UL)