H11G2 - HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
The H11GX series are photodarlington-type optically coupled optocouplers.
These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1 H11
H11G2 Features
* High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3
* High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA
* Low leakage current at elevated temperature (maximum 100 µA at 80°C)
* Underwriters Laboratory (UL)
