* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HG20N60B3 Datasheet (218.82 KB)
HG20N60B3
Fairchild Semiconductor
218.82 KB
40a 600v ufs series n-channel igbt.
Data Sheet
HGTG20N60B3
October 2004
40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic.
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