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HG20N60B3 Datasheet - Fairchild Semiconductor

HG20N60B3 - 40A 600V UFS Series N-Channel IGBT

HG20N60B3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HG20N60B3-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HG20N60B3

Manufacturer:

Fairchild Semiconductor

File Size:

218.82 KB

Description:

40a 600v ufs series n-channel igbt.

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