HG20N60B3 - 40A 600V UFS Series N-Channel IGBT
HG20N60B3 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
