HUFA75337G3 Datasheet - Fairchild Semiconductor

HUFA75337G3 N-Channel MOSFET

HUFA75332G3, HUFA75332P3, HUFA75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for .

HUFA75337G3 Features

* 60A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “G

HUFA75337G3 Datasheet (271.20 KB)