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HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET
HUFA76407DK8T-F085
Dual N-Channel Logic Level UltraFET® Power MOSFET
60 V, 3.5 A, 105 mΩ
Features
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process
Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V
technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is
Peak Current vs Pulse Width Curve
capable of withstanding high energy
UIS Rating Curve
in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUFA76407DK8T-F085 Datasheet
