Description
These N
Channel power MOSFETs are manufactured using
the innovative UltraFET process.This advanced process technology achieves the lowest possible on
resistance per silicon area, resulting in outstanding performance.
Features
- 75 A, 55 V.
- Simulation Models.
- Temperature Compensated PSPICEt and SABER® Models.
- Thermal Impedance SPICE and SABER Models.
- Peak Current vs Pulse Width Curve.
- UIS Rating Curve.
- These Devices are Pb.
- Free
www. onsemi. com
VDSS 55 V
RDS(ON) MAX 7 mW
D
ID MAX 75 A
G
S DRAIN (TAB)
TO.
- 247.
- 3 CASE 340CK
G D S GDS
DRAIN (FLANGE) TO.
- 220.
- 3
CASE 340AT
DRAIN (FLANGE)
G S
D2PAK.
- 3 CASE 418AJ.
