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HUF75639S3 - N-Channel Power MOSFET

This page provides the datasheet information for the HUF75639S3, a member of the HUF75639G3 N-Channel Power MOSFET family.

Datasheet Summary

Description

Symbol Ratings Units Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current Continuous (Figure 2) Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25°C VDSS VDGR VGS ID IDM EAS PD 100 V 100 V ±20 V 56 Figure

Features

  • 56 A, 100 V.
  • Simulation Models.
  • Temperature Compensated PSPICE® and SABER™ Electrical Models.
  • Spice and Saber Thermal Impedance Models.
  • www. onsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature.
  • TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant TO.
  • 247.
  • 3LD CAS.

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Datasheet preview – HUF75639S3

Datasheet Details

Part number HUF75639S3
Manufacturer ON Semiconductor
File Size 860.75 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HUF75639S3 Datasheet
Additional preview pages of the HUF75639S3 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel, Ultrafet 100 V, 56 A, 25 mW HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 These N−Channel power MOSFETs are manufactured using the innovative Ultrafet process. This advanced process technology achieves the lowest possible on− resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery− operated products. Formerly developmental type TA75639.
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