HUF75639P3 Datasheet (Fairchild Semiconductor)

HUF75639P3, N-Channel MOSFET

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet October 2013 N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

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