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HUF75623P3 - N-Channel MOSFET

Datasheet Summary

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (FLANGE) HUF75623P3 Symbol D Ordering Information PART NUMBER HUF75623P3 G.

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Datasheet Details

Part number HUF75623P3
Manufacturer Intersil Corporation
File Size 99.55 KB
Description N-Channel MOSFET
Datasheet download datasheet HUF75623P3 Datasheet
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Full PDF Text Transcription

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HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) HUF75623P3 Symbol D Ordering Information PART NUMBER HUF75623P3 G PACKAGE TO-220AB BRAND 75623P NOTE: When ordering, use the entire part number i.e., HUF75623P3 S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75623P3 UNITS V V V A A 100 100 ±20 22 15 Figure 4 Figures 6, 14, 15 85 0.
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